A Comparison Electrical Parameters of Au/n-Si (MS) and Au/(ITO-PVP)/n-Si (MPS) Structures Obtained from the Forward Bias (I-V) and Reverse Bias (C-V) Characteristics

Sevgili, Ömer and Azizian-Kalandaragh, Yasahr and Altındal, Şemsettin (2019) A Comparison Electrical Parameters of Au/n-Si (MS) and Au/(ITO-PVP)/n-Si (MPS) Structures Obtained from the Forward Bias (I-V) and Reverse Bias (C-V) Characteristics. In: 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019.

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Abstract

In this study, both Au/n-Si (MS) and Au/(ITO-PVP)/n-Si (MPS) structures were fabricated on the same n-Si wafer in the same conditions to see the effect of (ITO-doped PVP) organic interfacial layer on the main electrical parameters. Additionally, the forward bias (I-V) and reverse bias (C-V) characteristics were performed in wide range of bias voltage at room temperature for two type structures to see the discrepancies between measurement and calculated method. Some main electrical parameters such as the reverse-saturation current (Io), ideality factor (n), barrier height, BH, (B(I-V)), series (Rs) and shunt (Rsh) resistances, and rectifying rate (RR=IF/IR) of them were found from the I-V data as 2.58x10-8A, 6.43, 0.72 eV, 2.94 k, 0.19 M for MS and 8.53x10-13A, 2.67, 0.98 eV, 1.375 k, 10.40 M, 7620 for MPS type structure, respectively. Additionally, the values of diffusion potential (VD), doping donor atoms (ND), Fermi energy (EF), depletion layer width (WD) and BH (B(C-V)) were found from the reverse bias C-2-V characteristics at 1 MHz as 0.63 eV, 7.53x1014 cm-3, 0.288 eV, 102 m, and 0.893 eV for MS and 0.69 eV, 7.19x1014 cm-3, 0.289 eV, 110 m, and 0.956 eV for MPS type structure, respectively. Experimental results show that the used (ITO-PVP) organic interlayer improved the performance of the conventional MS structure and hence it can be successfully used instead of conventional insulator/oxide layer in respect of easy grown methods, low cost, low weight, low energy requirement, and flexibility when compared with traditional insulator materials such SiO2.

Item Type: Conference or Workshop Item (Paper)
Persian Title: A Comparison Electrical Parameters of Au/n-Si (MS) and Au/(ITO-PVP)/n-Si (MPS) Structures Obtained from the Forward Bias (I-V) and Reverse Bias (C-V) Characteristics
Persian Abstract: -
Subjects: Divisions > Conferences > 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019
Conferences > 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019
Divisions: Conferences > 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019
Subjects > Conferences > 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019
Date Deposited: 08 Dec 2019 05:53
Last Modified: 08 Dec 2019 05:53
URI: http://repository.uma.ac.ir/id/eprint/10426

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