Electrical Properties of the Ag/n-ZnO/p-Si Structures Using Current-Voltage Measurements

KARATAŞ, Şükrü (2019) Electrical Properties of the Ag/n-ZnO/p-Si Structures Using Current-Voltage Measurements. In: 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019.

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Abstract

In this work, nanostructure ZnO films were prepared by sol–gel method using spin coating technique. We investigated electrical properties of Ag/n-ZnO/p-Si Structures in dark and under 20, 60 and 100mW/cm2 white light (visible light) illuminations using current–voltage (I–V) measurements. The ZnO/p-Si diode exhibits a non-ideal behavior due to the interfacial layer and the series resistance. The values of main parameters such as ideality factors, barrier heights and series resistances obtained from different methods decreased with increasing illumination. It is seen that the values of main parameters obtained from different methods are in agreement with each other.

Item Type: Conference or Workshop Item (Paper)
Persian Title: Electrical Properties of the Ag/n-ZnO/p-Si Structures Using Current-Voltage Measurements
Persian Abstract: -
Subjects: Divisions > Conferences > 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019
Conferences > 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019
Divisions: Conferences > 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019
Subjects > Conferences > 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019
Date Deposited: 08 Dec 2019 06:08
Last Modified: 08 Dec 2019 06:08
URI: http://repository.uma.ac.ir/id/eprint/10432

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