Temperature Dependent Current-Transport Mechanisms (CTMs) in the Al/Al2O3/p-Si (MIS) Diodes (SDs) Using Current-Voltage-Temperature (I-V-T) Characteristics in the Temperature Range of 200-320 K

Kosal, Mehmet and Marıl, Elif and Altındal, Şemsettin (2019) Temperature Dependent Current-Transport Mechanisms (CTMs) in the Al/Al2O3/p-Si (MIS) Diodes (SDs) Using Current-Voltage-Temperature (I-V-T) Characteristics in the Temperature Range of 200-320 K. In: 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019.

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Abstract

The reverse bias saturation-current (Io), ideality factor (n), zero-bias barrier height (BH:ΦBo), rectifying ratio (RR), series (Rs) and shunt (Rsh) resistances of the fabricated Al/Al2O3/p-Si (MIS) diodes have been investigated function of temperature. These values were extracted from the forward-reverse bias current-voltage (I-V) characteristics in wide range of temperature (200-320 K) and voltage ( 3V). The values of Rs and Rsh were obtained from the Ohm’s Law as a simple method. On the other hand, the Io, n, ΦBo, n.ΦBo, Rs, and Rsh values were found as 2.34 pA, 2.366, 0.41eV, 0.969 eV, 54.64 k, 4.69 G at 200 K and 1.166 nA, 1.786, 0.510eV, 0.911 eV, 4.78 k, 0.11 G at 320 K, respectively. It is clear that all these parameters are strong function temperature. While the value of ΦBo increase with increasing temperature, the modified value of (n.ΦBo) by introduced the value of n in the reverse bias expression (Io=AA*T2exp(-q ΦBo/nkT)) decrease as like forbidden band gap with -4.927x10-4 eV/K temperature coefficient. This negative temperature coefficient of BH is very close to the temperature dependent band gap of Si (-4.73x10-4 eV/K). The higher value of n

Item Type: Conference or Workshop Item (Paper)
Persian Title: Temperature Dependent Current-Transport Mechanisms (CTMs) in the Al/Al2O3/p-Si (MIS) Diodes (SDs) Using Current-Voltage-Temperature (I-V-T) Characteristics in the Temperature Range of 200-320 K
Persian Abstract: -
Subjects: Divisions > Conferences > 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019
Conferences > 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019
Divisions: Conferences > 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019
Subjects > Conferences > 1st International Conference on Optoelectronics, Applied Optics and Microelectronics - 2019
Date Deposited: 08 Dec 2019 06:06
Last Modified: 08 Dec 2019 06:06
URI: http://repository.uma.ac.ir/id/eprint/10435

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