Fabrication of schottky barrier diode usinig nano composites SnO2-PVA

Footoohi-Shabloo, Saeed and Azizian-Kalandaragh, Yashar and Seifzadeh, Davod (2015) Fabrication of schottky barrier diode usinig nano composites SnO2-PVA. Masters thesis, university of Mohaghegh Ardabili.

Text (ساخت دیودهای سد شاتکی بر اساس نانو کامپوزیت¬های پلیمری- SnO2) Saeed Footoohi-Shabloo.pdf Download (1MB)

Abstract

In this work, the SnO2-PVA nanocomposite syntheses by ultrasound-assisted method. Then, the SnO2-PVA nanocomposite film have been structurally characterized by The x-ray diffraction (XRD), the surface morphological was investigated by Scanning Electron Microscopy (SEM), Then the optical band gap has been determined from Uv-Visible absorption spectra of SnO2-PVA nanocomposite, and the Fourier Transform Infrared (FTIR) measurement was conducted over the range of 0 to 4000 cm-1 intransmission made at room temperature. The XRD patterns of SnO2-PVA nanocomposite show that the structure are nanocrystalinein nature with average size bellow 57.165 nm. The Uv-visible absorbance spectra of the SnO2, show that values of band gap for SnO2 is found to be about 4.12eV and this value be related to the formation of nanostructures of SnO2. The SEM image of the as-prepared SnO2-PVA show that the SnO2 particles has uniform distribution on the PVA film, and the size of the particles is at the nanoscale. And the FTIR spectrum show that, all the characteristic bands corresponding to SnO2 and PVA could be observed in a pristine SnO2 and PVA film. The dielectric properties of SnO2-PVA thick film arrangement were studied by means of complex impedance spectroscopy. Experimental results revealed that the parameters have strong frequency dependence.The obtained values of showed increments with decreasing frequency. However, increasing frequency levels cause an increase in the AC electrical conductivity, real and imaginary part of electric modulus. After making the combination of SnO2-PVA, using it schottky barrier diode built. After Deposition of insulator layer (SnO2-PVA), performance of diode is improved. I-V characteristics revealed that, due to insulator layer (SnO2-PVA) deposition, shunt resistance values increased. Therefore, leakage current value decreased. Moreover, rectifying ratio was improved. I-V data indicated that high permittivity insulator layer (SnO2-PVA) also led to an increase in barrier height. Same result was also obtained through C-V data. Moreover The effect of frequency changes the performance of both the MIS and MS were studied.

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