Ab initio calculations of electronic and optical properties of Si1-xGexO2 alloys

Jalili, S and Tirandari, T (2008) Ab initio calculations of electronic and optical properties of Si1-xGexO2 alloys. In: 11th Iranian Physical Chemistry Seminar-July 2008.

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Abstract

High dielectric (high-K) constant materials are expected to replace conventional SiO2 gate oxide to continue the scaling down of silicon based semiconductor devices. Although the amorphous oxide doesn’t have grain boundaries and it is isotropic but polycrystalline oxide has many advantages for the future where their more abrupt interfaces allows us to scale down [1]. Although there are numerous oxides with extremely large dielectric constants, suitable candidates have not been identified yet. Ouang and Ching have reported a new pure phase of SiO2 in inverse Ag2O structure, named by them as i phase, which has an unusually high dielectric constant [2]. Sevick and Bulutay use i-phase for GeO2 and SnO2 and their ternary alloys with SiO2 [3]. Their study suggests that i-phase of Si0.5Ge0.5O2 has a higher dielectric constant and a wide band gape. Moreover it is lattice matched to Si(100) face. So we investigate the electronic and optical properties of Si1- xGexO2 alloys to find the other high-Ks and to see the effect of concentration of Si and Ge on its properties and to find an oxide with a higher dielectric constant.

Item Type: Conference or Workshop Item (Speech)
Persian Title: Ab initio calculations of electronic and optical properties of Si1-xGexO2 alloys
Persian Abstract: -
Subjects: Divisions > Conferences > 11th Iranian Physical Chemistry Seminar- July 2008
Conferences > 11th Iranian Physical Chemistry Seminar- July 2008
Divisions: Conferences > 11th Iranian Physical Chemistry Seminar- July 2008
Subjects > Conferences > 11th Iranian Physical Chemistry Seminar- July 2008
Date Deposited: 15 Jun 2019 07:35
Last Modified: 15 Jun 2019 07:35
URI: http://repository.uma.ac.ir/id/eprint/6706

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